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HGT1S20N60A4S9A
march 2006 data sheet 600v, smps series n-channel igbts the hgt 1s20n60a4s9a is mos gated high voltage switching devi ces co mb ini ng the be st features of mosfets and bipolar tran si s tors . these devi c es hav e the high input impedance of a m o sfet and the l o w on-state conduction loss of a bipolar transi stor. the much l ower on-state voltage drop varies only moderately betw een 25 o c and 150 o c. this igbt is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. this device has been optimized for high frequency switch mode power supplies . formerly developmental type ta49339. ordering information part number package brand hgt1s20n60a4s 9a to-263ab 20n60a4 note: when ordering, use the entire part number. symbol c g e features ? >100khz operation at 390v, 20a ? 200khz operation at 390v, 12a ? 600v switching soa capability ? typical fall time . . . . . . . . . . . . . . . . . 55ns at t j = 125 o c ? low conduction loss ? temperature compensating saber? model www.intersil.com ? related literature - tb334 guidelines for soldering surface mount
components to pc boards
packaging jedec to-263ab collector (flange) g c e fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ?2006 fai rchild semi conductor corporati on HGT1S20N60A4S9A rev. a
HGT1S20N60A4S9A
absolute maximum ratings t c = 25 o c, unless otherwise specified HGT1S20N60A4S9A units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 70 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 40 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 280 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 100a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 290 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 300 o c package body for 10s, see tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 260 o c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. pulse width limited by maximum junction temperature. electrical specifications t j = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v emitter to collector breakdown voltage bv ecs i c = 10ma, v ge = 0v 15 - - v collector to emitter leakage current i ces v ce = 600v t j = 25 o c - - 250 a t j = 125 o c - - 2 . 0 m a collector to emitter saturation voltage v ce(sat) i c = 20a, t j = 25 o c - 1 . 8 2 . 7 v v ge = 15v t j = 125 o c - 1 . 6 2 . 0 v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = 600v 4.5 5.5 7.0 v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 3 ?, v ge = 15v l = 100 h, v ce = 600v 100 - - a gate to emitter plateau voltage v gep i c = 20a, v ce = 300v - 8.6 - v on-state gate charge q g(on) i c = 20a, v ge = 15v - 142 162 nc v ce = 300v v ge = 20v - 182 210 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c - 15 - ns current rise time t ri i ce = 20a v ce = 390v - 12 - ns current turn-off delay time t d(off)i v ge =15v - 73 - ns current fall time t fi r g = 3 ? l = 500 h - 32 - ns turn-on energy (note 3) e on1 test circuit (figure 20) - 105 - j turn-on energy (note 3) e on2 - 280 350 j turn-off energy (note 2) e off - 150 200 j ?2006 fai rchild semi conductor corporati on HGT1S20N60A4S9A rev. a
20 0 80 40 60 25 100 300 500 HGT1S20N60A4S9A
electrical specifications t j = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units current turn-on delay time t d(on)i igbt and diode at t j = 125 o c - 15 21 ns current rise time t ri i ce = 20a v ce = 390v - 13 18 ns current turn-off delay time t d(off)i v ge = 15v - 105 135 ns current fall time t fi r g = 3 ? l = 500 h - 55 73 ns turn-on energy (note 3) e on1 test circuit (figure 20) - 115 - j turn-on energy (note 3) e on2 - 510 600 j turn-off energy (note 2) e off - 330 500 j thermal resistance junction to case r jc - - 0.43 o c/w notes: 2. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per je dec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method p roduces the true total turn-off energy loss. 3. values for two turn-on loss condi tions are shown for the convenience of the circuit desi gner. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 20. typical performance curves unless otherwise specified i ce , collector to emitter current (a) 120 100 80 60 40 20 0 t j = 15 0 o c, r g = 3 ? , v ge = 15v, l = 100 h 0 100 200 300 400 500 600 700 v ge = 15v die capability package limit i ce , dc collector current (a) 50 75 100 125 150 t c , case temperature ( o c) v ce , collector to emitter voltage (v) figure 1. dc collector current vs case figure 2. minimum switching safe operating area temperature t j = 125 o c, r g = 3 ? , l = 500 h, v ce = 390v f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 0.43 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t c 75 o c v ge 15v t sc , short circuit withstand time ( s) 14 i sc , peak short circuit current (a) v ce = 390v , r g = 3 ? , t j = 125 o c i sc t sc f max , operating frequency (khz) 12 10 350 8 300 6 250 4 2 150 0 100 10 20 30 40 50 10 11 12 13 14 15 i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) figure 3. operating frequency vs collector to figure 4. short circuit withstand time emitter current ?2006 fai rchild semi conductor corporati on HGT1S20N60A4S9A rev. a 5 40 100 450 200 400
0 20 40 80 60 100 1000 600 800 400 1200 200 1400 16 18 20 HGT1S20N60A4S9A
typical performance curves unless otherwise specified (continued) 100 i ce , collector to emitter current (a) duty cycle < 0.5% , v ge = 12v puls e dura tion = 250 s t j = 125 o c t j = 150 o c t j = 25 o c 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 80 60 40 20 0 duty cycle < 0.5%, v g e = 15v pulse durati on = 250 s t j = 125 o c t j = 15 0 o c t j = 25 o c 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce , collector to emitter voltage (v) figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage r g = 3 ? , l = 50 0 h , v c e = 3 90v t j = 12 5 o c , v g e = 1 2v, v ge = 15 v t 2 , v ge = 12v, v ge = 15v j = 5 o c 800 700 r g = 3 ? , l = 500 h, v ce = 390v t j = 125 o c, v ge = 12v or 15v t j = 2 5 o c, v g e = 12v or 15v e off , turn-off energy loss ( j) e on2 , turn-on energy loss ( j) 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 40
i ce , collector to emitter current (a)
figure 7. turn-on energy loss vs collector to emitter current 5 10 15 20 25 30 35 40 i ce , collector to emitter current (a) figure 8. turn-off energy loss vs collector to emitter current 36 22 r g = 3 ? h, v ce = 390v , l = 500 t j = 25 o c, t j = 125 o c, v ge = 1 2v t j = 25 o c, t j = 125 o c, v ge = 15v r g = 3 ? , l = 50 0 h , v c e = 3 90v t j = 2 5 o c, t j = 12 5 o c, v ge = 12 v t j = 2 5 o c or t j = 125 o c, v ge = 15 v t d(on)i , turn-on delay time (ns) 32 28 24 20 16 t ri , rise time (ns) 12 10 8 4 8 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9. turn-on delay time vs collector to figure 10. turn-on rise time vs collector to emitter current emitter current ?2006 fai rchild semi conductor corporati on HGT1S20N60A4S9A rev. a 14 12
80 120 100 110 90 80 120 160 200 240 40 HGT1S20N60A4S9A
typical performance curves unless otherwise specified (continued) 80 72 r g = 3 ? , l = 500 h, v ce = 390v v ge = 12v, v ge = 15v , t j = 12 5 o c ge = 15 v g e = 12v, v v, t j = 25 o c r g = 3 ? , l = 50 0 h, v ce = 390v t j = 125 o c , v ge = 1 2v or 1 5v v or 15 t j = 25 o c, v ge = 1 2 v t d(off)i , turn-off delay time (ns) 64 t fi , fall time (ns) 56 48 40 32 70 24 60 5 10 15 20 25 30 35
i ce , collector to emitter current (a)
16 40 5 10 15 20 25 30 35 40 i ce , collector to emitter current (a) figure 11. turn-off delay time vs collector to figure 12. fall time vs collector to emitter emitter current current e total , total switching energy loss (mj) i ce , collector to emitter current (a) 16 i g(ref ) = 1ma , r l = 1 5 ? , t j = 25 o c v ce = 600v v ce = 400v v c e = 200v dut y cy cle < 0.5 %, v ce = 10v pul se d ura tion = 250 s t j = 25 o c t j = 125 o c t j = -55 o c v ge , gate to emitter voltage (v) 14 12 10 8 6 4 2 0 0 6 7 8 910 11
v ge , gate to emitter voltage (v)
figure 13. transfer characteristic 12 0 20 40 60 80 100 120 140 160 q g , gate charge (nc) figure 14. gate charge waveforms e total , total switching energy loss (mj) 10 1 0.1 t j o h, v ce = ge = 15v e = e on2 + e i ce i ce i ce = 125 c, l = 500 390v, v total off = 10a = 20a = 30a 3 10 100 1000 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 r g = 3 ? , l = 500 h, v ce = 390v, v ge = 15v e total = e on2 + e off i ce = 30a i ce = 20a i ce = 10a 25 50 75 100 125 150 t c , case temperature ( o c) r g , gate resistance ( ? ) figure 15. total switching loss vs case figure 16. total switching loss vs gate resistance temperature ?2006 fai rchild semi conductor corporati on h gt 1s20n60a4s9a r ev. a 0
0 0 1 3 4 5 2 HGT1S20N60A4S9A
typical performance curves unless otherwise specified (continued) 2.2 fre quen cy = 1mhz c ie s c oes c res v ce , collector to emitter voltage (v) 2.1 2.0 1.9 1.8 1.7 dut y cyc le < 0.5 %, t j = 25 o c pul se du ration = 250 s, i c e = 30a i ce = 20a i ce = 10a 8 9 10 11 12 13 14 15 v ge , gate to emitter voltage (v) c, capacitance (nf) 20 40 60 80100 v ce , collector to emitter voltage (v) figure 17. capacitance vs collector to emitter figure 18. collector to emitter on-state voltage voltage vs gate to emitter voltage z jc 10 -2 10 -1 10 0 t 1 t 2 p d 1 / t 2 peak t j d x z jc jc c , normalized thermal response duty factor, d = t = (p x r ) + t single pulse 0.1 0.2 0.5 0.05 0.01 0.02 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , rectangular pulse duration (s) figure 19. igbt normalized transient thermal response, junction to case test circuit and waveforms r g = 3 ? h + - l = 500 hgtg20n60a4d dut diode ta49372 t fi t t ri t e e on2 d(off)i d(on)i 10% 90% 10% 90% off v ge v ce i ce v dd = 390v figure 20. inductive switching test circui t figure 21. switching test waveforms ?2006 fai rchild semi conductor corporati on hg t1s20n60a4s9a r ev. a 16
HGT1S20N60A4S9A
handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handlers body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precauti ons are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as eccosorbd? ld26 or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from
circuits with power on.
5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are
essentially capacitors. circuits that leave the gate
open-circuited or floating should be avoided. these
conditions can result in turn-on of the d evice due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 21. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 21. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instant aneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). ?2006 fai rchild semi conductor corporati on hg t1s20n60a4s9a r ev. a
rev. i19 trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for us e as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause t he failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without not ice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.

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